Abstract
In this work, the impact of back gate work function on analog/RF performance of Asymmetric Junctionless Dual Material Double Gate MOSFET with high K gate Stack (AJDMDG Stack MOSFET) has been studied. The impact of back gate work function on analog/RF parameters like drain current (ID), transconductance (gm), transconductance generation factor (TGF), intrinsic gain, output resistance (rout), cut-off frequency, maximum frequency of oscillation (fmax) etc. have been studied through TCAD device simulator. The results reveal that an improvement in analog/RF performance has been achieved by choosing a low value work function of the back gate.
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