Abstract
Underlap asymmetric junctionless dual material double gate MOSFET (UAJDMDG MOSFET) has been proposed and analytically modeled to enhance SCEs as well as hot carrier reliability (HCEs). Poisson’s equation is used to characterize the recommended structure analytically from the boundary conditions through method of parabolic approximation. SCEs of the proposed structure have been compared with UAJDG MOSFET structure. Potential distribution, DIBL, SS, drain current, and transconductance have all been studied as Figure of merit (FOM) measures. The results show that the UAJDMDG structure outperforms the UAJDG structure in terms of optimizing HCEs and SCEs.
Published Version
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