Impact of Negative Bottom Gate Voltage for Improvement of RF/Analog Performance in Asymmetric Junctionless Dual Material Double Gate MOSFET

Abstract

AbstractResearch on double-gate MOSFET has already exhibited several novel solutions of existing problems like reducing leakage current or short-channel effect. For both long-channel structure or microscopic devices, the role of the bottom-gate becomes more critical for making higher ON-to-OFF current ratio, and therefore, individual-gate architecture becomes more popular than tied-gate architecture owing to the possibility of individual tuning. Junctionless devices come into the limelight due to better mobility control than the other DG configurations, and considered the subject of investigation in the last few years. The current chapter investigates the effect of negative bottom gate voltage on the analog and RF performances of Asymmetric Junctionless Dual Material Double Gate (AJDMDG) MOSFET. TCAD device simulator was used to investigate the effect of negative bottom gate voltage on analog and RF parameters. The results show that utilizing a low value of the work function of the bottom gate terminal improved the analog and RF performance.KeywordsCut-off frequencyTransconductanceIntrinsic gainOutput resistanceGain bandwidth product