Abstract
This letter reports on a study of the impact of ⟨110⟩ uniaxial strain on the characteristics of InGaAs high electron mobility transistors (HEMT) by bending GaAs chips up to a strain level of 0.4%. Systematic changes in the threshold voltage and intrinsic transconductance were observed. These changes can be well predicted by Schrödinger–Poisson simulations of the one-dimensional electrostatics of the device that include the piezoelectric effect, Schottky barrier height change, and sub-band quantization change due to strain. The effect of ⟨110⟩ strain on the device electrostatics emerges as a dominant effect over that of transport in the studied InGaAs HEMTs.
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