A novel insulated gate technology for ingaas high electron mobility transistors using silicon interlayer based passivation technique

Abstract

A novel insulated gate technology for InGaAs high electron mobility transistors (HEMT) is described. It utilizes a silicon interface control layer (Si ICL)-based passivation structure. By applying an HF surface treatment, the technology becomes applicable to the air-exposed surfaces of InGaAs and InAlAs. The basic metal-insulator-semiconductor structures were fabricated and characterized in detail by x-ray photoelectron spectroscopy analysis and capacitance-voltage measurements. The interface has been shown to be essentially free from interface states. InGaAs insulated gate HEMTs (IGHEMT) were then success-fully fabricated. The fabricated recessed gate IGHEMTs have good gate control of the drain current with good pinch-off characteristics. A highest effective mobility of 2010 cm2/Vs was obtained. The devices show extremely low gate leakage currents below lnA/mm.