Abstract
This paper presents a multiscale characterisation approach, analysing the effect of colloidal silica polishing on crystallographic defects in multicrystalline silicon. Colloidal silica polishing for as little time as 30 min was found to significantly increase the recombination activity of all defects, as measured by electron beam induced current mapping. The impurities responsible for the room temperature contamination of defects due to colloidal silica polishing were Cu and Ni, as measured by atom probe tomography.
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