Abstract
An approach for the localization and characterization of electrically active defects in multicrystalline silicon and of artefacts in photovoltaic devices is presented. The essential idea of the method is the noninvasive magnetic detection of photocurrents generated in the sample by local illumination. Magnetic imaging with high spatial and magnetic resolution is performed by scanning the sample under investigation and synchronously measuring the magnetic field of the photocurrents using highly sensitive superconducting quantum interference device magnetometers. The technique enables the nondestructive and nonpolluting detection and investigation of electrically active grain boundaries in multicrystalline silicon wafers. Results obtained from photovoltaic devices show that typical, performance-limiting defects can be localized, as they cause distinct features in the magnetic field topography.
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