Abstract
A hydrodynamic hot electron model is used to study electron transport through a submicron N + N N + GaAs structure. This study is used to investigate improvements which the unique features of this model offer to analysis of devices operating under nonstationary transport conditions. The model is based upon semiclassical “hydrodynamic” conservation equations for the average carrier density, momentum and energy. The general model includes particle relaxation times, momentum relaxation times, energy relaxation times, electron temperature tensors and heat flow vectors as a function of average carrier energy for the Γ, X and L valleys of GaAs. For this study, we utilized a simplified single electron gas version of our model to clearly reveal the impact of the nonstationary terms in the model. Results from both a drift-diffusion model approach and a Monte Carlo analysis are used to show the relative accuracy and facility this new model offers for investigating practical submicron device structures operating under realistic conditions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
