Abstract
Thick GaN layers have been grown by hydride vapor phase epitaxy (HVPE) on different GaN templates grown by metalorganic vapor phase epitaxy. Crack formation could be reduced by using a hydrogen/nitrogen carrier gas mixture. We found strongly different HVPE layer quality when templates grown by different groups have been used, although these templates showed very much the same basic properties. Over 100 µm thick crack-free HVPE layers with extremely flat surface could be grown on optimized templates. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call