Abstract
A novel technique for fabricating large-diameter freestanding GaN wafers has been developed. This technique uses a porous GaN template with a TiN nano-net on top as the starting substrate for hydride vapor-phase epitaxy (HVPE) growth. A mechanically weak layer containing numerous small voids is formed between the template and the thick GaN layer during HVPE growth. The thermal stress due to the difference in thermal expansion coefficients between the GaN and sapphire results in self-separation during the cooling process after HVPE growth. As a result, freestanding GaN wafers with a diameter of 45 mm are obtained. These wafers are crack-free and have a mirror-like surface. The full widths at half maximum of GaN (0002) and (1010) peaks in the X-ray rocking curve profile are narrow, i.e. 60 and 92 arcsec, respectively. The dislocation density is low, i.e. 5 × 10 6 cm -2 .
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