Hybrid Particle-based Full-band Analysis of Ultra-small MOS

S J Wigger,M Saraniti,S M Goodnick

doi:10.1155/2001/94360

S J Wigger, M Saraniti + Show 1 more

Open Access

https://doi.org/10.1155/2001/94360

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Abstract

We report on the 2D and 3D modeling of ultra-small MOS structures using a newly developed full-band device simulator. The simulation tool is based on a novel approach, featuring a hybrid Ensemble Monte Carlo (EMC)-Cellular Automata (CA) simulation engine. In this hybrid approach charge transport is simulated using the CA in regions of momentum space where most scattering events occur and the EMC elsewhere, thus optimizing the trade-off between the fast, but memory consuming CA method and the slower EMC method. To account for the spatial distribution of the electric field and charge concentration, the hybrid EMC/CA simulator is self-consistently coupled with a 2D and 3D multi-grid Poisson solver. The solver is then used to simulate the performance of a 40 nm gate length n-MOSFET structure.

Highlights

The general trend in the electronics industry towards more highly integrated circuits, is driving the size of semiconductor devices into the deep sub-micron regime
New hybrid Ensemble Monte Carlo (EMC)/Cellular Automata (CA) method has been proposed [6], which optimizes the trade-off between memory and speed, while retaining accuracy
The equivalence between the hybrid EMC/CA and a traditional full-band EMC is demonstrated in Figure 2 for the electron number at two different fields for Si

Summary

INTRODUCTION

The general trend in the electronics industry towards more highly integrated circuits, is driving the size of semiconductor devices into the deep sub-micron regime. The EMC method has long demonstrated success in simulating carrier transport in semiconductor devices [2, 3]. This technique can be computational intensive, limiting its application, when a full-band representation of the electronic structure is implemented. The equivalence between the hybrid EMC/CA and a traditional full-band EMC is demonstrated in Figure 2 for the electron number at two different fields for Si. In spite of the sensitivity of the energy distribution on the transport model, the agreement of the two approaches is quite good. In the case of electrons in Si, the memory necessary for a full EMC simulation is 130Mbytes, while a CA simulation requires 1.2 Gbytes

DEVICE SIMULATION

FUTURE WORK