Abstract
The modeling of ultra-small MOSFETs is presented using a newly developed full-band, hybrid ensemble Monte Carlo (EMC)-cellular automata (CA) device simulator. In this hybrid approach charge transport is simulated using the CA in regions of momentum space where most scattering events occur and the EMC elsewhere, thus optimizing the trade-off between the fast, but memory-consuming CA method and the slower EMC method. In order to efficiently model 3D ultra-small FETs, the hybrid algorithm is coupled self-consistently with a 2D and 3D multi-grid Poisson solver.
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