Hybrid Bond Interconnect and Advanced Packaging Solutions

Abstract

Hybrid bond interconnect is a scalable technology that offers significant improvements over the incumbent Cu mbump technology. The notable advantages include, enhanced reliability of elemental metal interconnect, improved thermal performance of an inorganic bond interface and the high-speed performance with a low capacitance and inductance pad structure. Currently, the industry is adopting this technology for high-performance compute applications; however, we anticipate a broader adoption once the technology is readily available within the full supply chain. In this paper, we present the performance of our hybrid bond interconnect on multiple test vehicles including single 1 to 8-die stacks with various pad-pitch sizes, die sizes and configurations. We share die to wafer assembly yield results using our manufacturing worthy process where die are prepared on tape frame using standard pick and place equipment. The test vehicles cover a range of pad sizes (2-15 um), with pitches (4-40 um) and have different x,y dimensions from 1mmx1mm to 9mmx12mm. Reliability tests include MSL-3 precondition, high temperature storage and thermal cycling and on the various test structures