Abstract
Interface state generation in p-channel metal oxide semiconductor field effect transistors (MOSFETs) due to uniform hot-hole injection into the thin gate oxide and postinjection behavior of the generated interface states are investigated. The absence of a significant oxide electric field dependence of interface state generation supports the existence of a single generation mechanism. The experimental results suggest a mechanism associated with the interaction of neutral hydrogen for interface state generation. The number of generated interface states is linearly proportional to the number of trapped holes regardless of oxide thickness, which indicates active involvement of hole trapping in the formation of interface states. In contrast to the reports describing time-delayed formation of interface states during relaxation, we observed spontaneous postinjection annihilation of the generated interface states which was also linearly related to the number of detrapped holes. The experimental results suggest the presence of a reversible atomic structure at the Si/SiO2 interface with respect to trapping and subsequent detrapping of holes. The annealing efficiency of the generated interface states depends on the postinjection oxide field polarity.
Published Version
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