Abstract
Total Dose Effect (TDE) on solid state devices is of serious concern as it changes the electrical properties leading to degradation of the devices and failure of the systems associated with them. Ionization caused due to TDE in commercial P-channel Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) has been studied, where the failure mechanism is found to be mainly a result of the changes in the oxide properties and the surface effects at the channel beneath the gate oxide. The threshold voltage of the MOSFETs was found to shift from −0.69 V to −2.41 V for a total gamma dose of 1 Mrad. The net negative threshold shifts in the irradiated devices reveal the major contribution of oxide trapped charges to device degradation. The radiation induced oxide and interface charge densities were estimated through subthreshold measurements, and the trap densities were found to increase by one order in magnitude after a total gamma dose of 1 Mrad. Other parameters like transconductance, subthreshold swing, and drain saturation current are also investigated as a function of gamma dose.
Highlights
In recent years, one can observe a tremendous increase in the usage of electronic instrumentation for nuclear and space research, and it is often susceptible to high ionizing radiations in space
The photoelectric effect dominates at photon energies less than 50 keV, and pair production dominates at energies greater than 20 MeV with Compton scattering dominating in the intervening energy range [1]
Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) being widely used in space systems because of their faster switching speeds and simple drive requirements are very sensitive to ionizing gamma radiations
Summary
One can observe a tremendous increase in the usage of electronic instrumentation for nuclear and space research, and it is often susceptible to high ionizing radiations in space. Gamma rays interact with matter in three different ways: photoelectric effect, compton scattering, and pair production. MOSFETs being widely used in space systems because of their faster switching speeds and simple drive requirements are very sensitive to ionizing gamma radiations. Of most concern in the total dose effects is the creation of hole electron pairs in silicon dioxide. The dominant effects are due to holes being trapped at the oxide causing free electrons to be attracted to the Si–SiO2 interface and effectively resulting in an inversion of the doping near the interface [5]. Indian Journal of Materials Science cause leakage currents and change the electrical parameters of the MOSFETs. In addition to hole trapping, interface states are generated at Si–SiO2 interface. Holes transporting through p-channels undergo Coulomb scattering from the charged interface states resulting in reduction in carrier channel mobility and increase in channel ON resistance
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