Abstract
The trapping efficiency and dynamics of hot carriers in GaAs/AlGaAs single quantum wells with different confinement structures are investigated by photoluminescence excitation spectroscopy and picosecond luminescence spectroscopy. The trapping efficiency is highest for graded confinement structures and reaches 100% for a quantum well with a linear band gap profile of the AlGaAs. The lower trapping efficiencies in single quantum wells without additional confinement and in separate confinement heterostructures is attributed to radiative and nonradiative recombination in the AlGaAs. The trapping times are shorter than 20ps for all the different structures.
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