Hot-carrier transport in thin-film SOI MOSFETs at room and cryogenic temperatures

Abstract

The influence of the substrate bias on the hot-carrier effects in thin-film SOI MOSFETs is investigated. It is shown that the high-field properties strongly depend on the substrate bias, with a substantial decrease of the impact ionisation rate for volume inversion operation, which is very promising for the reduction of hot-carrier-induced degradation of double-gate SOI MOSFETs. Furthermore, the analysis of the electrical properties of these devices in a wide temperature range allows us to propose a satisfactory model for the hot-carrier behaviours, which highlights the role of the substrate bias for control of the high-field region and, thus, of the nonstationary transport in thin Si films.