Abstract
Previous conflicting reports concerning fully-depleted SOI device hot electron reliability is partially due to misunderstanding over the maximum channel electric field (E/sub m/). Experimental results using SOI MOSFETs with body contacts indicate that E/sub m/ is just a weak function of thin-film SOI thickness (T/sub si/) and E/sub m/ can be significantly lower than in a bulk device with drain junction depth (X/sub j/) comparable to T/sub si/ The theoretical correlation between SOI MOSFET's gate current and substrate current are experimentally confirmed. This provides a means (I/sub G/) of studying E, in SOI device without body contacts. Both N- and P-MOSFETs can have better hot-carrier reliability than comparable bulk devices. Thin film SOI MOSFETs have better prospects for meeting breakdown voltage and hot-electron reliability requirements than previously thought. >
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