Abstract
A review of the main special mechanisms in thin film SOI MOSFETs is given. The influence of the most important technological and electrical parameters, such as the film and buried oxide thicknesses, film and silicon substrate doping, channel length, substrate bias and interface defects, is discussed. The improvement of the electrical properties in the case of fully depleted thin film SOI MOS transistors, especially the driving current and the subthreshold swing, is addressed. We investigate, on one hand, the advantages of thin-film SOI devices in relation with scaling down rules down to deep submicron transistors, and, on the other hand, the main parasitic phenomena, such as the kink, latch, breakdown, self-heating and hot-carrier degradation effects. Finally, the low temperature properties and quantum effects are outlined.
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