Abstract
This work primarily focuses on the degradation degree of bulk current (IB) for 28 nm stacked high-k (HK) n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs), sensed and stressed with the channel-hot-carrier test and the drain-avalanche-hot-carrier test, and uses a lifetime model to extract the lifetime of the tested devices. The results show that when IB reaches its maximum, the ratio of VGS/VDS values at this point, in the meanwhile, gradually increases in the tested devices from the long-channel to the short ones, not just located at one-third to one half. The possible ratiocination is due to the ON-current (IDS), in which the short-channel devices provide larger IDS impacting the drain junction and generating more hole carriers at the surface channel near the drain site. In addition, the decrease in IB after hot-carrier stress is not only the increment in threshold voltage VT inducing the decrease in IDS, but also the increment in the recombination rate due to the mechanism of diffusion current. Ultimately, the device lifetime uses Berkley’s model to extract the slope parameter m of the lifetime model. Previous studies have reported m-values ranging from 2.9 to 3.3, but in this case, approximately 1.1. This possibly means that the critical energy of the generated interface state becomes smaller, as is the barrier height of the HK dielectric to the conventional silicon dioxide as the gate oxide.
Highlights
With the continuous scaling of complementary metal–oxide–semiconductor (CMOS) technology, there are many benefits to metal–oxide–semiconductor field-effect transistors (MOSFETs), including an increasing number of devices in integrated circuits, providing impressive electrical performance of the device, and decreasing the entire power consumption
We used a HK-stack and metal gate (MG) as the n-MOSFET structure to analyze the variation in substrate current under hot carrier stresses [22]
The possible ratiocination indicates that the gate voltage increases, indicating a stronger vertical field, to attract more inversion electrons to recombine the holes in the longer channel length
Summary
With the continuous scaling of complementary metal–oxide–semiconductor (CMOS) technology, there are many benefits to metal–oxide–semiconductor field-effect transistors (MOSFETs), including an increasing number of devices in integrated circuits, providing impressive electrical performance of the device, and decreasing the entire power consumption. Where τ is the device lifetime, IDS is the drain-to-source current, ISUB is the substrate current, and the acceleration factor m = φit /φi , where φit is the critical hot carrier energy required to create an interface state of approximately 3.7 eV and φi is the minimum hot carrier energy required to create an impact ionization of approximately 1.3 eV for the poly-gate and Si-SiO2 interface. These hot carriers may generate extra electron–hole pairs [15] in the channel, especially in the depletion region of the drain size Reviewing the CHC mechanism and its effects on n-MOSFETs of deep submicron CMOS bulk technologies guided into the carrier dominant energy
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