Abstract
A new concept of silicon bipolar transistor technology is proposed. The resulting horizontal current bipolar transistor (HCBT) is simulated assuming the 0.25 /spl mu/m technology. The surface of the device is smaller than conventional super-self aligned bipolar transistors. The same doping profile as in known vertical current devices is achieved by simpler technology using single polysilicon layer, without conventional epitaxial and n/sup +/ buried layers and with reduced number of lithography masks and technological steps. The simulated dc and ac characteristics of HCBT are similar to the characteristics of standard SST devices.
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