Abstract
A very compact Horizontal Current Bipolar Transistor (HCBT) is fabricated and tested. It is processed in bulk Si substrate where the crystal plane is perpendicular to the surface and is used as the active transistor sidewall. In this way, the sidewall roughness can be minimised by using crystallographic dependent etchants making the intrinsic transistor doping process highly controllable and repeatable. Hence, unlike in the existing lateral bipolar transistors, the optimum dopant distribution can be achieved what will improve transistor’s high-frequency performance. Additionally, HCBT is processed in simple technology with only 5 lithography masks making this structure attractive for low-cost, low-power high-performance bipolar/BiCMOS applications. The improvement of fT and fmax up to 24 and 50 GHz, respectively, can be achieved by using HCBT technology.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
