A low-cost horizontal current bipolar transistor (HCBT) technology for the bicmos integration with finfets

T Suligoj,K Tsui,P Biljanovic,J.K.O Sin,K.L Wang,K.J Chen,Hailao Liu Hailao Liu

doi:10.1109/isdrs.2003.1272372

A low-cost horizontal current bipolar transistor (HCBT) technology for the bicmos integration with finfets

T Suligoj, K Tsui + Show 5 more

https://doi.org/10.1109/isdrs.2003.1272372

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Publication Date: Dec 10, 2003

Citations: 1

Affiliation: University of Hong Kong, Hong Kong University of Science and Technology, University of California, Los Angeles

#Horizontal Current Bipolar Transistor Technology #Horizontal Current Bipolar Transistor + Show 8 more

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Abstract

In this paper, we present a scaled transistor processed with the improved technology, resulting in the enhancement of its electrical performance. The electrical characteristics such as collector-emitter breakdown, charge sharing of the processed transistor is presented. The electrical properties of HCBTs are compared with the existing LBTs (Lateral Bipolar Transistors). This HCBT technology was applied in the BiCMOS integration with FinFETs.

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