Abstract
The high-quality single crystal diamond (SCD) grown in the Microwave Plasma Chemical Vapor Deposition (MPCVD) system was studied. The CVD deposition reaction occurred in a 300 torr high pressure environment on a (100) plane High Pressure High Temperature (HPHT) diamond type II a substrate. The relationships among the chamber pressure, substrate surface temperature, and system microwave power were investigated. The surface morphology evolution with a series of different concentrations of the gas mixture was observed. It was found that a single lateral crystal growth occurred on the substrate edge and a systemic step flow rotation from the [100] to the [110] orientation was exhibited on the surface. The Raman spectroscopy and High Resolution X-Ray Diffractometry (HRXRD) prove that the homoepitaxy part from the original HPHT substrate shows a higher quality than the lateral growth region. A crystal lattice visual structural analysis was applied to describe the step flow rotation that originated from the temperature driven concentration difference of the C2H2 ion charged particles on the SCD center and edge.
Highlights
Diamond is gaining more attention for its outstanding optical, electrical, mechanical, and thermal properties
The High Pressure High Temperature (HPHT) method still produces the overwhelming majority of a single crystal diamond, the metallic impurity incorporation and high dislocation density in crystal edges limits its further application in the semiconductor and quantum field
Many studies have indicated that the surface morphology, growth rate, and crystal quality depend on the internal reaction chamber structural parameters such as the substrate holder, input gas mixture, and chamber pressure
Summary
Diamond is gaining more attention for its outstanding optical, electrical, mechanical, and thermal properties. High-quality single crystal diamond (SCD) is available in superhard cutting tools, optical components, semiconductor and high-power electronics, and even in quantum applications [1,2,3,4]. The HPHT method still produces the overwhelming majority of a single crystal diamond, the metallic impurity incorporation and high dislocation density in crystal edges limits its further application in the semiconductor and quantum field. MPCVD technology has become a mature and reliable method for high quality SCD growth since it has the advantages of the control of the nitrogen concentration and dislocation density [5]. Many studies have indicated that the surface morphology, growth rate, and crystal quality depend on the internal reaction chamber structural parameters such as the substrate holder, input gas mixture, and chamber pressure. Nad et al compared different sizes of pocket holders to Materials 2019, 12, 3953; doi:10.3390/ma12233953 www.mdpi.com/journal/materials
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