Abstract
Homoepitaxial growth of step-flow single crystal diamond was performed by microwave plasma chemical vapor deposition system on high-pressure high-temperature diamond substrate. A coarse surface morphology with isolated particles was firstly deposited on diamond substrate as an interlayer under hillock growth model. Then, the growth model was changed to step-flow growth model for growing step-flow single crystal diamond layer on this hillock interlayer. Furthermore, the surface morphology evolution, cross-section and surface microstructure, and crystal quality of grown diamond were evaluated by scanning electron microscopy, high-resolution transmission electron microcopy, and Raman and photoluminescence spectroscopy. It was found that the surface morphology varied with deposition time under step-flow growth parameters. The cross-section topography exhibited obvious inhomogeneity in crystal structure. Additionally, the diamond growth mechanism from the microscopic point of view was revealed to illustrate the morphological and structural evolution.
Highlights
Due to its excellent electrical properties, such as wide band-gap, high carrier mobility, high saturation velocity, low dielectric constant, and high breakdown field, diamond is considered as a potential candidate material for fabrication of durable diamond-based devices with high performances of high-frequency and high-power, which can operate in harsh environments [1,2,3,4,5]
We explored the growth mechanism and detailed evolution of the surface morphology, microstructures, and crystal quality of grown diamonds by changing the growth models from hillock growth to step-flow growth
To explore how a step-flow single crystal diamond (SCD) film was deposited on hillock interlayer under stepflow growth parameters, the surface morphology evolution as a function of deposition time was investigated
Summary
Due to its excellent electrical properties, such as wide band-gap, high carrier mobility, high saturation velocity, low dielectric constant, and high breakdown field, diamond is considered as a potential candidate material for fabrication of durable diamond-based devices with high performances of high-frequency and high-power, which can operate in harsh environments [1,2,3,4,5]. In 2002, Yan et al [8] introduced a small amount of N2 into microwave plasma chemical vapor deposition chamber and increased growth rate to 150 μm/h, which presented an interesting prospect for the development of large-area single crystal diamond (SCD). In this way, the Japanese group developed a mosaic SCD substrate with a size of 40 × 60 mm by connecting several “clone wafers” [9], and they have already put 20 × 20 mm SCD wafers into production. The remarkable functional properties of diamonds depend on their physical and chemical properties and on their surface morphology
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