Abstract
High quality single crystal diamond builds the foundation for the applications in high-power, high-frequency electronic devices. In this paper, high-quality (100) single-crystal diamond film grown by microwave plasma chemical vapor deposition (MPCVD) was studied. By optimizing the pre-etching process before growth, where the distance between the substrate and plasma plays an important role, high-quality chemical vapor deposition (CVD) diamond layer with a smooth surface can be acquired. The root-mean-square roughness of CVD diamond surface was reduced to 0.2 nm ∼ 0.5 nm within 5 μm × 5 μm area while maintaining the growth at a high rate of 3 μm/h ∼ 30 μm/h. The sheet resistance of the CVD diamond layer was 6.1 kΩ/sq by transmission line method, indicating a high potential to fabricate high-performance hydrogen-terminal diamond-based electronic devices.
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