Abstract
The highly (111)-oriented BiFe0.95Mn0.05O3 (BFMO) films owning excellent ferroelectric performance have been epitaxially grown on (0002) GaN substrates with La0.7Sr0.3MnO3 (LSMO)/TiO2 bi-layer buffer by pulsed laser deposition. By means of the LSMO/TiO2 bi-layer buffer, the lattice mismatch between perovskite (111) BFMO and wurtzite (0002) GaN was miraculously decreased from 12.4% to 1.4%. The remnant ferroelectric polarization and coercive field of the BFMO (111) film were determined to be 115μC/cm2 and 450kV/cm, respectively. Compared with the BFMO film deposited on the bare GaN substrate, the remnant ferroelectric polarization was enhanced by 92%. The piezoresponse force microscopy (PFM) image further confirmed that the BFMO (111) film owned perfect ferroelectric switching properties.
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