Abstract
In this work, we have studied the microstructures, nanodomains, polarization preservation behaviors, and electrical properties of BiFe0.95Mn0.05O3 (BFMO) multiferroic thin films, which have been epitaxially created on the substrates of SrRuO3, SrTiO3, and TiN-buffered (001)-oriented Si at different oxygen pressures via piezoresponse force microscopy and conductive atomic force microscopy. We found that the pure phase state, inhomogeneous piezoresponse force microscopy (PFM) response, low leakage current with unidirectional diode-like properties, and orientation-dependent polarization reversal properties were found in BFMO thin films deposited at low oxygen pressure. Meanwhile, these films under high oxygen pressures resulted in impurities in the secondary phase in BFMO films, which caused a greater leakage that hindered the polarization preservation capability. Thus, this shows the important impact of the oxygen pressure on modulating the physical effects of BFMO films.
Highlights
In recent years, multiferroic materials have attracted renewed research interest due to their electric, magnetic, and structural order parameters, which might give rise to generation electronic devices
A higher oxygen pressure would impair the growth and combination of thin films induced by the substrate under the same temperature, which leads to the formation of the polycrystalline state in BFMO
BFMO films deposited at an oxygen pressure of 2 Pa possess a single phase, while BFMO obtained at PO2 = 10 Pa contains a Bi2 O3 phase [15]
Summary
Multiferroic materials have attracted renewed research interest due to their electric, magnetic, and structural order parameters, which might give rise to generation electronic devices. These properties facilitate the magnetic (spin) state control by electric fields, with some having the potential to be used in multistate logic sensors, non-volatile memories, solid-state transformers, and electromagneto-optic actuators [1,2,3,4,5,6]. Has been intensively investigated due to its unique characteristics of a high ferroelectric–paraelectric transition temperature (TC ) of approximately 1083 K, and high antiferromagnetic to paramagnetic. Little effort has Materials 2017, 10, 1258; doi:10.3390/ma10111258 www.mdpi.com/journal/materials
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