Abstract
We have investigated the effects of oxygen pressure on the microstructure, leakage current, ferroelectric and magnetic properties of BiFe0.95Mn0.05O3 (BFMO) thin films epitaxially grown on SrRuO3, SrTiO3, and TiN-buffered (001)-oriented Si substrates. X-ray diffraction θ−2θ scans and scanning electron microscope images reveal that the epitaxy and microstructures of the BFMO films were strongly dependent on oxygen pressure during film deposition. Epitaxial BFMO films can be obtained in a low oxygen pressure of 2 Pa while polycrystalline BFMO films were obtained in a relatively high oxygen pressure of 15 Pa. Furthermore, the oxygen pressure strongly influences the ferroelectric properties of the BFMO films grown on Si. The remnant polarization (2Pr) of approximately 107 μC/cm2 and coercive field (2Ec) of approximately 580 kV/cm were observed for the epitaxial BFMO films grown in a low oxygen pressure of 2 Pa. The saturation magnetization of the BFMO films decreases with increasing oxygen pressure while the magnetic coercive field remains unchanged.
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