Abstract
This paper describes a newly formulated secondary ion mass spectrometry (SIMS) method for ultra‐trace impurity analysis in . Elements of analysis are separated from crystals, concentrated into a salt film, and analyzed by SIMS. To successfully formulate this method, the separation of impurities from , the residual film formation and the quantitative method were studied in detail. This new method was ascertained to have a sensitivity 1000 times higher than direct SIMS analysis for such impurities as Zn. Furthermore, it is clear that this method provides more accurate data than do other quantitative methods through a comparison of the quantitative data concerning impurities in .
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.