Abstract
This paper describes a newly formulated secondary ion mass spectrometry (SIMS) method for ultra‐trace impurity analysis in . Elements of analysis are separated from crystals, concentrated into a salt film, and analyzed by SIMS. To successfully formulate this method, the separation of impurities from , the residual film formation and the quantitative method were studied in detail. This new method was ascertained to have a sensitivity 1000 times higher than direct SIMS analysis for such impurities as Zn. Furthermore, it is clear that this method provides more accurate data than do other quantitative methods through a comparison of the quantitative data concerning impurities in .
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