Abstract
A review is presented on quantitative analysis of impurities in III-V compounds semiconductors, especially GaAs, by secondary ion mass spectrometry (SIMS).The accuracy of SIMS analysis was investigated in comparison with chemical analysis results in the round robin study which was supported by Japan Society for the Promotion of Science Commitee 145. This study shows that the accuracy of SIMS quantitative analysis is ±10-30%. Highly sensitive and highly accurate quantitative SIMS analysis using chemical preparation is reviewed. This method has the very low detection limits (0.5-5ppb) and very high accuracy (±5-10%). SIMS quantitative analysis of GaAs using LTE model is also described. The accuracy of LTE model was considered to be factor 2.
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