Abstract
In order to obtain the ultraviolet-(UV)-free white light-emitting diodes (W-LEDs), a high-level-Fe-doped p-type ZnO nanowire (NW) array is fabricated on an n-type GaN substrate. An elemental analysis shows a weight ratio of the doped Fe in ZnO of 1.93%. A current-voltage characterization demonstrates that the ZnO:Fe NWs exhibit p-type conductivity. Photoluminescence and electroluminescence measurements demonstrate the formation of Fe-related donor levels (FeZn) and acceptor levels (FeZn-VZn pairs). These doping-induced energy levels contribute to prevent the intrinsic ZnO UV emission, and achieve a stable UV-free W-LED with chromaticity coordinates of approximately (0.37, 0.35) and correlated color temperature of approximately 4112 K at bias voltages of 17 V. This study demonstrates the possibility of p-type ZnO by Fe-doping and their potentials for applications in W-LEDs.
Published Version
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