Abstract
Minority carrier diffusion length in p-type Sb-doped ZnO nanowires was measured as a function of temperature and forward bias injection duration. The minority carrier diffusion length displays a thermally activated length increase with the energy of 144 ± 5 meV. The forward bias injection exhibits an increase in diffusion length with the activation energy of 217 ± 20 meV, indicating the possible involvement of a SbZn-2VZn acceptor complex.
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