Abstract
We report on a monolithic Sb-based Vertical Cavity Surface Emitting Laser operating at CW up to 70°C. The structure is made of two AlAsSb/GaSb mirrors, type-I InGaAsSb/AlGaAsSb wells and an InAs/GaSb tunnel junction. By selectively under-etching this tunnel junction, we improve the VCSEL performances and demonstrate low threshold current and high temperature continuous wave operation.
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