InGaAs/GaAs/InGaP strained-layer quantum-well lasers grown by gas-source molecular beam epitaxy

Abstract

Aluminum-free InO.2Ga0.8As/GaAs/In0.49Ga0.5l P strained-layer-quantum-well lasers are grown by gas-source molecular beam epitaxy (GSMBE) for the first time. Ridge waveguide lasers of 3 p.m width show 1.0 im lasing wavelength at room temperature under continuous wave (CW) conditions and have low threshold currents (7 mA and 12 mA for 254 p.m and 508 jim-long cavity, respectively), high external quantum efficiencies (0.9 mW/mA), and high peak powers (160 mW). High temperature CW operation has been demonstrated up to 185°C, which is comparable to the best result (200°C) reported for the InGaAs/GaAs/AlGaAs lasers. Self-align index guided InGaAs/GaAsIInGaP lasers are also fabricated using GSMBE in two growth steps. Threshold current of 12 mA with an external differential quantum efficiency of 0.68 mW/mA is obtained from a 2.5 jtm x 508 tm self-aligned laser at room temperature under CW operation condition.