High temperature operation (185 degrees C) of InGaAs/GaAs/InGaP quantum well lasers

Abstract

Aluminium-free InGaAs/GaAs/InGaP strained-layer quantum-well lasers have been grown on GaAs substrates by gas-source MBE (molecular beam epitaxy). High-temperature CW (continuous wave) operation of these (ridge waveguide lasers) has been demonstrated up to 185 degrees C, which is comparable to the best high-temperature laser performance in the strained-layer InGaAs/GaAs/AlGaAs quantum well lasers. Self-align index-guided lasers are also fabricated with gas-source MBE in two growth sequences. A threshold current of 12 mA is obtained from a 2.50- mu m-wide and 508- mu m-long self-aligned laser at room temperature under CW operation. This work demonstrates the regrowth capability of the gas source MBE technique to fabricate high-performance optoelectronic circuits and devices on the patterned aluminum-free InGaP layers. >