High temperature continuous wave operation of InAs quantum dot lasers near 1.3 μm

Abstract

We have demonstrated high performance temperature insensitive narrow ridge waveguide QD lasers near 1.3 /spl mu/m using four stacks of InAs QD layer embedded within strained InGaAs quantum wells as an active region. For a 1.5 mm long cavity QD laser, ground state CW lasing has been achieved with single facet output power of 15 mW and a differential slope efficiency of 35% at temperature as high as 100C, while at room temperature having a differential quantum efficiency about 55% and single facet output power of 50 mW. The characteristic temperature for ground state CW lasing is 78 K at temperatures ranging from 200C to 1000C.