Abstract
AbstractWe investigate anisotropic properties of strained InGaAs quantum wells on the high index (11n)A (n = 3,4,5) GaAs substrates. The polarization dependence of photoluminescence of strained InGaAs quantum wells were measured, and optical anisotropy was observed. We calculated anisotropy of the optical transition matrix elements based on the 4x4 and 6x6 Luttinger model for the quantum wells with uniaxial strain. The calculated anisotropy taking into account of split‐off band qualitaively agree with our experiment. This indicates that the band mixing of split‐off band into the heavy‐hole band largely contributes to the the optical anisotropy in the strained InGaAs quantum wells on the high index substrates. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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