Abstract
We have demonstrated 980-nm thin-film vertical-cavity surface-emitting lasers (VCSELs), which have strained InGaAs quantum wells in the active region, for the hybrid integration of optoelectronic devices. The thin-film VCSELs were fabricated using a functional layer transfer technique, which consisted of pre-fabrication of the laser structure, Au–Sn metal-bonding onto an AlN substrate and subsequent removal of the growth substrate. Threshold currents of 3.3 mA, output powers of over 3 mW and a threshold voltage of 2.1 V were obtained, indicating there was no serious degradation of laser characteristics due to the transfer process.
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