Abstract
Low threshold current and high temperature operation is achieved in a 1.55 µm graded-index separate-confinement heterostructure and strained multi-quantum well AlInAs/AlGaInAs laser diode which was fabricated from epitaxial wafers grown by low-pressure organometallic vapour phase epitaxy. Remarkable improvements in threshold current, operating temperature and characteristic temperature have been demonstrated. The threshold current is 7 mA at 20°C, the emission wavelength is 1.5542 µm and the characteristic temperature between 20 and 70°C is 84 K.
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