High-Speed Programming Not-OR Flash Memory Cells With Titanium Disilicide Drain

Abstract

A Not-OR (NOR) flash memory cell using a titanium disilicide (TiSi2) drain was designed to increase programming speed and driving current. This NOR flash memory cell with a TiSi2 drain was proposed on the basis of the fundamental structure of conventional NOR flash memory cells with a length of 90 nm. The programming speed and driving current of the NOR flash memory cell with a TiSi2 drain were simulated using T-SUPREM4 and MEDICI. The simulation results showed that the heavily doped carriers existing in the TiSi2 drain can be used to increase the programming speed of the NOR flash memory cell and that a decrease in source/drain series resistance utilizing the silicide in the NOR flash memory cell with a TiSi2 drain helps increase driving current density.