Flash Memory Device with `I' Shape Floating Gate for Sub-70 nm NAND Flash Memory

Abstract

In this article, we proposed a novel `I' shape floating gate applicable to the sub-70 nm flash memory cell with high performance and scalability. It has modified floating gate of conventional flash memory to have high coupling-ratio (CR), low effect of interference or cross-talk. Specifically, it has ∼13% higher CR and ∼33/46% lower effect of cross-talk of the bit-line/word-line state than those of conventional flash memory cell with scale-downed geometry. In addition, `I' shape flash memory cell shows improved characteristics about programming time, drain disturbance, read current, sub-threshold swing, and drain induced barrier lowering than conventional flash memory cell.