Abstract
AbstractIn this paper, an analytical model for finding the S‐factor of the FC‐SGT flash memory cell is derived. It is confirmed that the results of analysis agree well with the three‐dimensional simulation results. In comparison with the conventional planar flash memory cell, the FC‐SGT flash memory cell has a sufficiently smaller S‐factor. As a result, it is easier to realize multilevel operation by the FC‐SGT flash memory than by the conventional planar flash memory. © 2006 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 89(8): 34–41, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecjb.20250
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Electronics and Communications in Japan (Part II: Electronics)
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
