Abstract
An unique not-OR (NOR) flash memory cell using an asymmetric Schottky barrier (SB) was designed to increase programming speed and driving current. An asymmetric SB NOR flash memory cell was proposed on the basis of the fundamental structure of the conventional NOR flash memory cells with a length of 90 nm. The programming speed and the driving current of the SB NOR flash memory cell with an asymmetric SB were simulated by using T-SUPREM4 and MEDICI. The simulation results showed that the heavily doped carriers existing in the titanium-disilicide Schottky drain can be used to increase programming speed of the SB NOR flash memory cell and that a decrease in the source/drain series resistance utilizing the silicide in the SB NOR flash memory cell help to increase driving current density.
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