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Cite Journal: Applied Physics Letters |  Publication Date: Apr 5, 2005 |
 Citations: 155 |  License type: mit |
Affiliation: University of Michigan–Ann Arbor
1.3 μ m tunnel injection quantum-dot lasers are demonstrated. The laser heterostructures are grown by molecular-beam epitaxy. The InAs self-organized quantum dots are p doped to optimize the gain. The lasers are characterized by Jth=180A∕cm2, T0=∞, dg∕dn≈1×10−14cm2, f−3dB=11GHz, chirp of 0.1Å, and zero α parameter.
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