Temperature dependent output characteristics of p-doped 1.1 and 1.3 μm quantum dot lasers

Abstract

ABSTRACT The characteristics of p-doped 1.1 µm and 1.3 µm self-assembled In(Ga)As quantum dot lasers grown by molecular beam epitaxy have been studied. With optimum p-doping, we demonstrate quantum dot lasers with zero-temperature dependence of the threshold current (T 0 = ’ ) and the output slope efficiency. These characteristics are explained through a self-consistent model that includes temperature-dependent Auger recombination in the quantum dots. With tunnel injection, we measure greatly enhanced -3dB frequency response, 25 GHz and 11 GHz in 1.1 µm and 1.3 µm tunnel injection quantum dot lasers, respectively. These devices also exhibit near zero .-parameters and extremely small chirp (< 0.2 A), in addition to temperature insensitive operation. Keywords : Quantum dot, semiconductor laser, p-doping, tunnel injection, frequency response, threshold current 1. INTRODUCTION Over the last decade, semiconductor lasers that incorporate In(Ga)As quantum dot (QD) active regions have attracted intensive research efforts