Abstract
The magneto-optical spectrum of the shallow donors in ultra-high-purity MOCVD InP is studied. The central cell structure on the 1s-2p+ and 1s-3p+ lines shows that the dominant donor contaminant is silicon but significant amounts of sulphur, germanium and another donor (probably selenium) are also present. Strong lines from negatively charged donor ions (D- states) can be observed, indicating that the samples are relatively uncompensated. The main spectral features are very similar to those found with high-purity VPE GaAs but, because MOCVD InP is slightly purer, more lines are observed. The appearance of certain higher order lines causes the interpretation of the GaAs data to be changed in some cases. Theory can predict the observed line positions on the revised interpretation to an accuracy of about 0.3%. The 1s-2p lines are broader than expected in comparison with GaAs.
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