Identification of germanium and tin donors in InP

Abstract

Central cell structure due to germanium and tin donors in InP is identified in carefully back-doped vapor phase epitaxial material. Both near band edge photoluminescence and far infrared photoconductivity in high magnetic fields are employed to resolve spectral features arising from different donor species. Relative to the likely effective mass donor binding energy of 5.46 meV, the Ge and Sn chemical shifts are deduced to be 0.30 and 0.21 meV, respectively.