Abstract
InP grown by gas-source molecular beam epitaxy at low temperature has been studied by Hall effect and admittance spectroscopy measurements. Contrary to GaAs, InP grown at low temperature is n-type and has low resistivity. The electron concentration of InP increases dramatically with decreasing growth temperature. A deep level at Ec−ED=320±50 meV is found to be the dominant donor in InP grown at low temperature.
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