Abstract
III-N semiconductors growth on high quality ScAlMgO4 (SCAMO) substrates was studied. The GaN epitaxial layer grown on the SCAMO substrate showed a low defect density of 5.6 × 107 cm−2 evaluated by cathode luminescence and had a distinct improvement in crystallinity compared to the GaN layer on a sapphire substrate. LEDs on both SCAMO and sapphire substrates were grown, and their optical properties were compared. The LED on the SCAMO substrate showed high luminescence efficiency by photoluminescence, and it was 14.3% at 300 K. Bright emission from the LED on the SCAMO substrate was observed under current injection and the electroluminescence properties revealed that the external efficiency of the LED on the SCAMO substrate was 15% higher than that of the LED on the sapphire substrate.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
